1997. 4. 2 1/1 semiconductor technical data KTB1424 epitaxial planar pnp transistor revision no : 1 general purpose darlington transistor. features high dc current gain : h fe =3000(min.) (v ce =-2v, i c =-1a) complementary to ktd2424. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -10 v collector current i c -3 a base current i b -0.5 a collector power dissipation (tc=25 1 ) p c 25 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-80v, i e =0 - - -20 a emitter cut-off current i ebo v eb =-10v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -60 - - v dc current gain h fe (1) v ce =-2v, i c =-1a 3000 - - h fe (2) v ce =-2v, i c =-3a 1000 - - saturation voltage collector-emitter v ce(sat) i c =-3a, i b =-30ma - - -1.5 v base-emitter v be(sat) i c =-3a, i b =-30ma - - -2.8
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